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| PD - 96114 IRF7805QPBF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance N Channel MOSFET Surface Mount Available in Tape & Reel 150C Operating Temperature Automotive [Q101] Qualified Lead-Free SO-8 S S S G 1 2 3 4 8 7 A D D D D 6 5 Description Specifically designed for Automotive applications, these HEXFET(R) Power MOSFET's in package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics making it ideal in a variety of power applications. This surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. T o p V ie w Device Features IRF7805Q VDS 30V RDS(on) 11m Qg 31nC Qsw 11.5nC Qoss 36nC Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Max. 30 12 13 10 100 2.5 1.6 0.02 -55 to + 150 Units V e e c A W W/C C Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance RJL RJA h Junction-to-Ambient eh Junction-to-Drain Lead Parameter Typ. --- --- Max. 20 50 Units C/W www.irf.com 1 07/23/07 IRF7805QPBF Static @ TJ = 25C (unless otherwise specified) Parameter BVDSS RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltageh Static Drain-to-Source On-Resistanceh Gate Threshold Voltage Min. Typ. Max. Units 30 --- 1.0 --- --- --- --- --- --- --- --- --- --- --- 0.5 --- --- --- --- --- 9.2 --- --- --- --- --- --- 22 3.7 1.4 6.8 8.2 3.0 --- 16 20 38 16 --- 11 3.0 70 10 150 100 -100 31 --- --- --- 11.5 3.6 1.7 --- --- --- --- nC ns V m V A Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7.0A VDS = VGS, ID = 250A VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 100C VGS = 12V VGS = -12V VGS = 5.0V VDS = 16V ID = 7.0A h d Drain-to-Source Leakage Current IGSS Qg Qgs1 Qgs2 Qgd Qsw Qoss RG td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge h nA Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Switch Charge (Qgs2 + Qgd) Output Charge nC h h VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 7.0A RG= 2 Resistive Load Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time e Diode Characteristics Parameter IS ISM VSD Qrr Qrr(s) Continuous Source Current (Body Diode)A Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- 88 55 2.5 A Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 7.0A, VGS = 0V di/dt = 700A/s VDS = 16V, VGS = 0V, IS = 7.0A di/dt = 700A/s (with 10BQ040) VDS = 16V, VGS = 0V, IS = 7.0A h 106 1.2 --- --- V ns nC f --- --- --- Reverse Recovery Charge (with Parallel Schottky) f Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss R is measured at TJ of approximately 90C. Devices are 100% tested to these parameters. 2 www.irf.com Typical Characteristics IRF7805QPBF Fig 1. Normalized On-Resistance vs. Temperature Fig 2. Typical Gate Charge vs. Gate-to-Source Voltage 10 ISD , Reverse Drain Current (A) TJ = 150 C 1 TJ = 25 C 0.1 0.4 V GS = 0 V 0.5 0.6 0.7 0.8 0.9 VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 Fig 4. Typical Source-Drain Diode Forward Voltage Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 1000 10 1 0.1 0.001 t1 , Rectangular Pulse Duration (sec) www.irf.com Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 3 IRF7805QPBF SO-8 Package Outline Dimensions are shown in millimeters (inches) 9 6 ' & ! % " $ 7 9DH 6 6 i DI8C@T HDI H6Y $"! %'' # " &$ '( (' ! (' (%' HDGGDH@U@ST HDI H6Y "$ &$ "" ( #' !$ $ !$ $ % @ $ # C !$Ab dA 6 p 9 @ r r C #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( % A (% $ A' "' # !&AA76TD8 %"$AA76TD8 $' %! !$ # A $ !& A' %Y r F G r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ APPUQSDIU 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 96U@A8P9@AXX QA2A9@TDBI6U@TAG@69AS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S www.irf.com Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 4 IRF7805QPBF SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.07/2007 www.irf.com 5 |
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